• Academic
Staff Record
Associate Professor

Rajib Rahman

[p]: 

+61 2 9385 6058

[f]: 

+61 2 9385 6060

Department: 

Subjects Taught: 

Teaching: 

Physics 1121/1131

Education: 

PhD, Purdue University, USA, 2009.

Masters, Purdue University, USA, 2005.

Bachelor of Science, Gettysburg College, USA, 2002.

Research Interests: 

I am a computational physicist who develops and utilizes advanced simulation techniques to understand quantum materials and devices. My research is interdisciplinary in scope and spreads over condensed matter physics, electrical engineering, material science, and computational science. My objective is to develop future electronics and computing technologies utilizing novel quantum phenomena in condensed matter. Solid-state quantum computing is one of my active areas of research. I have developed computational tools that can model various aspects of semiconductor qubits such as electronic structure, response to electric and magnetic fields, many-body interactions, and spin-lattice and spin-spin interactions. I am also interested in emerging 2D and topological materials for low energy electronics. 

 

Selected Publications: 

Semiconductor Qubits

"Aharonov-Bohm interference of fractional quantum Hall edge modes", James Nakamura, Saeed Fallahi, Harshad Sahasrabudhe, Rajib Rahman, Shuang Liang, Geoffrey C Gardner, Michael J Manfra, Nature Physics 15, 563 (2019).

"Valley dependent anisotropic spin splitting in silicon quantum dots", Rifat Ferdous, Erika Kawakami, Pasquale Scarlino, Michał P Nowak, DR Ward, DE Savage, MG Lagally, SN Coppersmith, Mark Friesen, Mark A Eriksson, Lieven MK Vandersypen, Rajib Rahman, Nature Quantum Information (npjqi) 4, 1-8 (2018). 

"Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability", Rifat Ferdous, Kok W Chan, Menno Veldhorst, J C C Hwang, C H Yang, Harshad Sahasrabudhe, Gerhard Klimeck, Andrea Morello, Andrew S Dzurak, Rajib Rahman, Phys. Rev. B. Rapid. Comm. 97, 241401 (2018). 

“Addressable electron spin resonance using donors and donor molecules in silicon”, Samuel J Hile, Lukas Fricke, Matthew G House, Eldad Peretz, Chin Yi Chen, Yu Wang, Matthew Broome, Samuel K Gorman, Joris G Keizer, Rajib Rahman, Michelle Y Simmons, Science Advances 4 (7), eaaq1459 (2018). 

“Highly tunable exchange in donor qubits in silicon”, Yu Wang, Archana Tankasala, Lloyd C. L. Hollenberg, Gerhard Klimeck, Michelle Y. Simmons, Rajib Rahman, Nature (NPJ) Quantum Information 2, 16008 (2016).

"Silicon quantum processor with robust long distance coupling", Guilherme Tosi, Fahd A Mohiyaddin, Vivien Schmitt, Stephanie Tenberg, Rajib Rahman, Gerhard Klimeck, Andrea Morello, Nature Communications 8, 450 (2017).  

“Spin-lattice relaxation times of single donors and donor clusters in silicon”, Y. Hsueh, H. Buch, Y. Tan, Y. Wang, L. C. L. Hollenberg, G. Klimeck, M. Y. Simmons, and R. Rahman, Physical Review Letters 113, 246406 (2014). 

“Spatially resolving valley quantum interference of a donor in silicon”, Joseph Salfi, Jan Mol, Rajib Rahman, Gerhard Klimeck, Michelle Simmons, Lloyd Hollenberg, and Sven Rogge, Nature Materials 13, 605 (2014). 

“Spin Blockade and Exchange in Coulomb-Confined Silicon Double Quantum Dots”, Bent Weber, Y. H. Matthias Tan, Suddhasatta Mahapatra, Thomas F. Watson, Hoon Ryu, Rajib Rahman, Lloyd C. L. Hollenberg, Gerhard Klimeck and Michelle Y. Simmons, Nature Nanotechnology 9, 430 (2014). 

 “Spin readout and addressability of Phosphorus donor clusters in silicon”, H. Buch, S. Mahapatra, R. Rahman, A. Morello, and M.Y. Simmons, Nature Communications 4, 2017 (2013).  

"Lifetime enhanced transport in silicon due to spin and valley blockade", G. P. Lansbergen, R. Rahman, J. Verduijn, G. C. Tettamanzi, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, S. Rogge, Physical Review Letters 107, 136602 (2011).

"Mapping donor wavefunction deformations at sub Bohr-orbit resolution", S. H. Park, R. Rahman, G. Klimeck, L. C. L. Hollenberg, Physical Review Letters 103, 106802 (2009).

“Gate induced quantum confinement transition of a single dopant atom in a Si FinFET”, G.P. Lansbergen, R. Rahman, C.J. Wellard, P.E. Rutten, J. Caro, N. Collaert, S. Biesemans, I. Woo, G. Klimeck, L.C.L. Hollenberg, and S. Rogge, Nature Physics 4, 656 (2008). 

“High Precision Quantum Control of Single Donor Spins in Silicon”, R. Rahman, C. J. Wellard, F. R. Bradbury, M. Prada, J. Cole, G. Klimeck, L. C. L. Hollenberg, Physical Review Letters 99, 036403 (2007).

2D Material Electronics

"Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors"Tarek Ameen, Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman, Scientific Reports 6, 28515 (2016), 

“Design rules for high performance tunnel transistors from 2-D materials”, H. Ilatikhameneh, G. Klimeck, J. Appenzeller, R. Rahman, IEEE Journal of the Electron Devices Society (J-EDS) Vol. 4, Issue 5, p 260-265 (2016).

“Electrically tunable bandgaps in bilayer MoS2”, T. Chu, H. Ilatikhameneh, G. Klimeck, R. Rahman, Z. Chen, Nanoletters 15(12), 8000-8007 (Nov 2015). 

“Can Tunnel FETs scale below 10 nm?”, H. Ilatikhameneh, G. Klimeck, R. Rahman, Electron Device Letters Vol. 37, pages 115-118 (Nov, 2015), 

“Dielectric engineered tunnel field effect transistor”, H. Ilitaikhameneh, G. Klimeck, J. Appenzeller, R. Rahman, Electron Device Letters, Vol. 36, No. 10, pp 1097-1100 (2015). 

“Tunnel field effect transistors in two dimensional transition metal dichalcogenides”, H. Ilatikhameneh, B. Novakovic, Y. Tan, G. Klimeck, R. Rahman, J. Appenzeller, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (JxCDC)Vol. 1, pp 12-18 (2015).

Multi-scale Simulation and Modeling Methods of Electronic Systems

“Two-electron states of a group V donor in silicon from atomistic full configuration interaction", Archana Tankasala, Joseph Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y Simmons, Lloyd CL Hollenberg, Sven Rogge, Rajib Rahman, Phys. Rev. B, 97, 195301 (2018);

“Optimization of edge state velocity in the integer quantum Hall regime", Harshad Sahasrabudhe, Bozidar Novakovic, James Nakamura, Saeed Fallahi, Michael Povolotskyi, Gerhard Klimeck, Rajib Rahman, Michael J Manfra, Phys. Rev. B 97, 085302 (2018).

"Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions", Tarek Ameen, Hesameddin Ilatikhameneh, Jun Huang, Michael Povolotskyi, Rajib Rahman, Gerhard Klimeck, IEEE Transactions on Electron Devices 64 (6), 2512-2518 (2017).